MRF7S19120NR1 – RF Power LDMOS Transistor for RF & Communication Systems

Description

Technical Specifications:

• Technology: LDMOS RF Power Transistor
• Frequency Range: 1805 MHz – 1880 MHz
• Output Power: 120W
• Efficiency: Up to 40%
• Gain: High power gain for improved RF performance
• Supply Voltage: 28V
• Package Type: NI-1230S-4
• Operating Temperature: -40°C to +150°C
• Applications: Cellular base stations, RF power amplifiers, LTE/GSM networks, and industrial RF heating.

Product Features:

• High RF Output Power: Delivers up to 120W of output power for high-efficiency RF applications.
• Optimized for RF Communication: Operates in the 1805-1880 MHz frequency range, ideal for LTE and GSM base stations.
• Enhanced Linearity: Designed for high linearity and low distortion in RF transmission.
• High Efficiency: Provides high power gain with efficiency up to 40% for reduced power consumption.
• Rugged LDMOS Technology: Built to withstand high voltage and temperature variations.
• Low Thermal Resistance: Designed with advanced thermal management for improved reliability.
• Industry-Standard Package: Encapsulated in a compact NI-1230S-4 package for easy integration.
• RoHS Compliant: Meets environmental and regulatory standards for sustainable designs.