ATF-36077-STR – Ultra Low Noise Pseudomorphic High Electron Mobility Transistor (PHEMT)

The ATF-36077-STR is an ultra-low noise PHEMT designed for high-frequency applications, offering exceptional performance in terms of noise figure and gain. Ideal for use in low noise amplifiers (LNAs) for satellite communications and other RF applications.

Product Brochure

Product Features:

  • Ultra-Low Noise Figure: Achieves a typical noise figure of 0.5 dB at 12 GHz, ensuring minimal signal degradation.
  • High Associated Gain: Provides a typical gain of 12 dB at 12 GHz, enhancing signal strength.
  • Wide Frequency Range: Operates effectively from 2 GHz to 18 GHz, suitable for various high-frequency applications.
  • Low Parasitic Package: Housed in a low parasitic, surface-mountable ceramic package for optimal performance.
  • PHEMT Technology: Utilizes pseudomorphic high electron mobility transistor technology for superior performance.

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