Description
Technical Specifications:
- Technology: LDMOS RF Power Transistor
- Frequency Range: Up to 2.7 GHz
- Output Power: 85W
- Efficiency: High power gain with up to 50% efficiency
- Gain: Optimized for linearity and low distortion
- Supply Voltage: 28V
- Package Type: NI-780S-4
- Operating Temperature: -40°C to +150°C
- Applications: Wireless infrastructure, RF amplifiers, LTE/WiMAX base stations, and broadcast transmission.
Reviews
There are no reviews yet.