IRLML2030TRPBF – 30V 5.3A N-Channel HEXFET Power MOSFET

Description

Technical specifications:

• MOSFET type: N-Channel
• Drain-source voltage (VDS): 30V
• Continuous drain current (ID): 5.3A (at VGS = 10V, Ta = 25°C)
• RDS(on): 0.042Ω max @ VGS = 2.5V, ID = 2.7A
• Gate threshold voltage (VGS(th)): 0.7V – 1.3V
• Total gate charge (Qg): 4.5nC typical
• Package: SOT-23 (Surface Mount)
• Operating temperature range: -55°C to +150°C
• Applications: Load switching, battery management, DC-DC converters, portable electronics, LED drivers

Product features:

• Low on-resistance: RDS(on) as low as 0.042Ω at VGS = 2.5V for minimal conduction loss.
• Logic level gate drive: Fully enhanced at low VGS levels, making it suitable for 2.5V–5V logic.
• High current capability: Supports up to 5.3A drain current (pulsed up to 20A).
• Fast switching: Low gate charge enables high-frequency operation and improved efficiency.
• Thermally efficient package: SOT-23 surface-mount for compact PCB layouts.
• Lead-free and RoHS compliant: Environmentally friendly and fully compliant with global standards.