IRFPS40N60K – 600V N-Channel HEXFET Power MOSFET

Description

Technical specifications:

• Drain-to-source voltage (V_DSS): 600V
• Continuous drain current (I_D): 40A @ 25°C
• R_DS(on): 0.22Ω max
• Total gate charge (Q_g): 180nC typical
• Gate threshold voltage (V_GS(th)): 2.0V–4.0V
• Package: TO-247AC
• Operating temperature: -55°C to +150°C
• Applications: Switch-mode power supplies, motor control, industrial drives, welders, UPS systems

Product features:

• High voltage rating: 600V drain-to-source voltage
• Low R_DS(on): Only 0.22Ω max for efficient conduction
• High-speed switching: Minimizes switching losses and EMI
• TO-247AC package: Robust design for high-power dissipation
• High current handling: Continuous drain current up to 40A
• Avalanche energy rated: For rugged performance in demanding environments