DDTC114EUA-7-F – NPN Pre-Biased Digital Transistor

Description

Technical Specifications:

• Transistor Type: NPN, Pre-Biased
• Collector-Emitter Voltage (VCEO): 50V
• Collector Current (IC): 100mA
• Base Resistor (R1): 10kΩ
• Emitter Resistor (R2): 10kΩ
• Power Dissipation (Ptot): 200mW
• Package / Case: SOT-323 (SC-70)

Product Features:

• Integrated Biasing Resistors: Simplifies circuit design by eliminating the need for external resistors.
• High Collector-Emitter Voltage: Withstands voltages up to 50V, suitable for various applications.
• Moderate Collector Current: Supports continuous currents up to 100mA.
• Compact Surface-Mount Package: Housed in a SOT-323 package, ideal for space-constrained designs.
• RoHS Compliant: Meets environmental and safety standards.