MRF6S27085HR5 – RF Power LDMOS Transistor for High-Power RF Applications

Description

Technical Specifications:

• Technology: LDMOS RF Power Transistor
• Frequency Range: Up to 2.7 GHz
• Output Power: 85W
• Efficiency: High power gain with up to 50% efficiency
• Gain: Optimized for linearity and low distortion
• Supply Voltage: 28V
• Package Type: NI-780S-4
• Operating Temperature: -40°C to +150°C
• Applications: Wireless infrastructure, RF amplifiers, LTE/WiMAX base stations, and broadcast transmission.

Product Features:

• High RF Output Power: Provides up to 85W of power for high-performance RF applications.
• Optimized for RF Communication: Operates in the 2.7 GHz frequency range, making it suitable for WiMAX, LTE, and RF amplifiers.
• Superior Efficiency: High-efficiency LDMOS technology reduces power consumption and heat generation.
• Enhanced Linearity: Maintains low distortion and excellent signal integrity for superior RF performance.
• Wideband Operation: Supports a broad frequency range for flexibility in various RF applications.
• Durable Design: Withstands high operating temperatures and voltage fluctuations.
• Industry-Standard Package: Housed in an NI-780S-4 package for easy integration into RF circuit designs.
• RoHS Compliant: Environmentally friendly and meets industry safety standards.