Description
Technical Specifications:
- Breakover Voltage: 64V
- Off-State Voltage: 170V
- Peak Pulse Current (10/1000µs): 30A
- Holding Current (Ih): 150mA
- Capacitance: 100pF
- Package Type: 8-SOIC (0.154″, 3.90mm Width)
- Mounting Type: Surface Mount
The TISP61089BDR-S is a dual forward-conducting buffered p-gate thyristor (SCR) overvoltage protector designed to safeguard Subscriber Line Interface Circuits (SLICs) from overvoltages caused by lightning, AC power contact, and induction. It offers a 170V off-state voltage and a peak pulse current capability of 30A, ensuring reliable protection for telecommunication applications.
Technical Specifications:
Product Features:
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