SPW20N60C3 – 600V CoolMOS™ Power Transistor

Description

Technical specifications:

• MOSFET type: N-channel enhancement-mode
• Drain-source voltage (VDS): 600V
• Continuous drain current (ID): 20A
• RDS(on): 0.19Ω (typ.)
• Gate charge (Qg): 170 nC (typ.)
• Total gate charge: Fast switching for reduced switching losses
• Package type: TO-247
• Operating temperature range: -55°C to +150°C
• Applications: SMPS, PFC stages, motor drives, industrial power conversion

Product features:

• High voltage rating: 600V drain-source voltage for wide application compatibility.
• Low RDS(on): Only 0.19Ω for reduced conduction losses and improved efficiency.
• High-speed switching: Enables compact and lightweight power supply designs.
• CoolMOS™ C3 technology: Delivers superior performance in hard-switching applications.
• High avalanche ruggedness: Ideal for demanding and fault-tolerant designs.