IRF7343TRPBF – 55V Dual N-Channel HEXFET Power MOSFET

Description

Technical specifications:

• Drain-to-source voltage (V_DSS): 55V
• Continuous drain current (I_D): 4.2A per channel @ 25°C
• R_DS(on): 0.065Ω max @ V_GS = 10V
• Gate charge (Q_g): 8.5nC typical
• Gate threshold voltage (V_GS(th)): 1.0V – 2.5V
• Package: SO-8
• Operating temperature: -55°C to +150°C
• Applications: Load switches, DC-DC converters, battery-powered systems, notebook power rails

Product features:

• Dual N-channel MOSFETs: Compact design for efficient power switching
• Low R_DS(on): 0.065Ω max per channel enhances system efficiency
• Fast switching: Suitable for DC-DC converters and load switches
• Logic level drive: Operates with low gate voltage
• SO-8 package: Ideal for space-constrained layouts
• RoHS compliant: Environmentally friendly and lead-free