IRF7342TRPBF – 55V Dual N-Channel HEXFET Power MOSFET

Description

Technical specifications:

• Drain-to-source voltage (V_DSS): 55V
• Continuous drain current (I_D): 5.2A per channel @ 25°C
• R_DS(on): 0.045Ω max @ V_GS = 10V
• Gate charge (Q_g): 9nC typical
• Gate threshold voltage (V_GS(th)): 1.0V – 2.5V
• Package: SO-8
• Operating temperature: -55°C to +150°C
• Applications: Notebook power systems, DC-DC converters, load switching, portable devices

Product features:

• Dual N-channel MOSFETs: Two independent MOSFETs in a single SO-8 package
• Low R_DS(on): 0.045Ω max for efficient switching performance
• Logic-level gate drive: Operates with gate voltages as low as 2.5V
• Fast switching: Optimized for DC-DC conversion and load management
• Thermal efficiency: SO-8 package enables easy PCB thermal management
• Environmentally compliant: Lead-free and RoHS compliant