IRF6613TRPBF – 25V N-Channel HEXFET Power MOSFET in SO-8

Description

Technical specifications:

• Drain-to-source voltage (V_DSS): 25V
• Continuous drain current (I_D): 34A
• R_DS(on): 1.4mΩ max @ V_GS = 10V
• Total gate charge (Q_g): 17nC typical
• Gate threshold voltage: 1.0V – 2.5V
• Package: SO-8 (Dual Flat No-lead)
• Operating temperature: -55°C to +175°C
• Applications: DC-DC converters, synchronous buck converters, load switches, CPU/GPU power systems

Product features:

• Ultra-low R_DS(on): Minimizes conduction losses, improving system efficiency
• High-speed switching: Enables efficient operation in high-frequency designs
• Compact SO-8 package: Optimized for surface-mount applications
• 100% Rg and UIS tested: Ensures reliability and rugged performance
• Lead-free and RoHS compliant: Environmentally friendly and safe for modern designs