IPG20N06S2L-50 – 60V N-Channel Power MOSFET

Description

Technical specifications:

• Type: N-Channel MOSFET
• Drain-source voltage (VDS): 60V
• Continuous drain current: Up to 42A
• Gate threshold voltage (VGS(th)): 1V to 2.5V
• RDS(on): 20 mΩ max at VGS = 10V
• Total gate charge (Qg): Low for efficient switching
• Package: DPAK (TO-252)
• Operating temperature range: -55°C to +175°C
• Applications: Automotive ECU, power distribution, motor control, DC-DC converters

Product features:

• Low on-resistance: RDS(on) as low as 20 mΩ for reduced conduction losses.
• High-speed switching: Suitable for high-frequency applications with fast switching performance.
• Logic-level gate drive: Compatible with 5V logic level for easy integration with microcontrollers.
• Robust design: Avalanche-rated and capable of handling high current loads.
• Compact package: Available in DPAK for efficient thermal performance and space savings.
• Automotive-grade: AEC-Q101 qualified for use in automotive environments.