Description
Technical specifications:
- IGBT type: HighSpeed 3 IGBT
- Collector-emitter voltage (Vce): 600V
- Continuous collector current (Ic): 50A
- VCE(sat): 1.85V (typical) at 25Β°C
- Switching frequency: Optimized for up to 40 kHz
- Gate-emitter voltage (Vge): Β±20V
- Package: TO-247 3-pin
- Operating junction temperature: -55Β°C to +150Β°C
- Applications: Motor drives, UPS, welders, solar inverters, induction heating
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