BSZ165N04NS G – 40V, 165A N-Channel MOSFET in PG-TSDSON-8

Description

Technical specifications:

• MOSFET type: N-Channel
• Drain-source voltage (Vds): 40V
• Drain current (Id): 165A (at Tc = 25°C)
• RDS(on): 1.6 mΩ (typical at Vgs = 10V)
• Gate threshold voltage (Vgs(th)): 2V – 3V
• Gate charge (Qg): 64 nC (typical)
• Package: PG-TSDSON-8 (SuperSO8)
• Operating temperature range: -55°C to +175°C
• Applications: Automotive ECUs, synchronous buck converters, load switching, power distribution systems

Product features:

• High current capability: Continuous drain current up to 165A (at 25°C).
• Low RDS(on): Just 1.6 mΩ for reduced conduction losses and high efficiency.
• High-speed switching: Supports high-frequency operation for compact designs.
• Logic level gate drive: Compatible with 4.5V and 10V gate signals.
• Enhanced thermal performance: Compact PG-TSDSON-8 package with optimized heat dissipation.
• AEC-Q101 qualified: Suitable for automotive-grade applications.