BSS670S2L H6327 – N-Channel Logic-Level Enhancement Mode Power MOSFET

Description

Technical specifications:

• Transistor type: N-Channel Enhancement Mode MOSFET
• Drain-source voltage (VDS): 30V
• Continuous drain current (ID): 3.6A
• Gate threshold voltage: 0.5V to 1.2V
• RDS(on): 70 mΩ @ VGS = 2.5V
• Package: SOT-23 (Surface Mount)
• Power dissipation: 1.3W
• Operating temperature: -55°C to +150°C
• Applications: Load switches, battery management, DC-DC converters, power distribution

Product features:

• Logic-level gate drive: Fully enhanced with standard 2.5V or 3.3V logic levels.
• Low RDS(on): Only 70 mΩ at VGS = 2.5V, reducing power loss.
• High current capability: Handles up to 3.6A continuous drain current.
• Fast switching speed: Enables efficient power control and high-frequency switching.
• Compact SOT-23 package: Ideal for space-constrained designs.
• RoHS compliant: Environmentally friendly and lead-free.