The SSP10065A is a high-performance super junction power MOSFET designed for high-efficiency switching applications. With its low RDS(on) and excellent thermal characteristics, it delivers outstanding reliability and performance in power electronics systems.
Technical Specifications:
Model Number: IXGH20N120B
Type: Insulated Gate Bipolar Transistor (IGBT)
Voltage Rating (V<sub>CES</sub>): 1200V
Collector Current (I<sub>C</sub>): 20A
Gate-Emitter Voltage (V<sub>GE</sub>): ±20V
Collector Dissipation (P<sub>tot</sub>): 150W
Package Type: TO-247
Operating Temperature Range: -55°C to +150°C
Product Features:
High Efficiency: Low RDS(on) for minimized conduction losses.
High Voltage Capability: Rated for up to 100V operation.
High Current Handling: Supports continuous drain current up to 65A.
Rugged Design: Superior avalanche energy and dynamic performance.
Compact Package: Optimized for space-saving designs.
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