MRFE6S9205HSR3 – High-Power RF LDMOS Transistor

Description

Technical Specifications:

• Technology: LDMOS RF Power Transistor
• Frequency Range: 920 MHz – 2050 MHz
• Output Power: 205W
• Efficiency: High power gain with up to 60% efficiency
• Gain: Optimized for linearity and low distortion
• Supply Voltage: 28V
• Package Type: NI-1230S-4
• Operating Temperature: -40°C to +150°C
• Applications: RF heating, industrial generators, broadcasting, wireless communication, and RF amplification.

Product Features:

• High RF Output Power: Provides up to 205W output power for high-performance RF applications.
• Optimized for RF & Industrial Use: Operates in a wide frequency range, making it suitable for ISM, broadcast, and communication applications.
• High Efficiency: Advanced LDMOS technology ensures excellent power efficiency and reduced thermal stress.
• Rugged & Reliable: Designed to withstand high temperatures and voltage fluctuations.
• Enhanced Linearity: Maintains low distortion and superior signal integrity for RF communication.
• Broadband Performance: Supports a wide frequency range for flexible RF applications.
• Durable Package: Housed in an industry-standard NI-1230S-4 package for easy integration.
• RoHS Compliant: Environmentally friendly and meets industry safety standards.