MRF7S19100NR1 – High-Power RF LDMOS Transistor for RF & Wireless Applications

Description

Technical Specifications:

• Technology: LDMOS RF Power Transistor
• Frequency Range: 1805 MHz – 1880 MHz
• Output Power: 100W
• Efficiency: Up to 40%
• Gain: High power gain for improved RF performance
• Supply Voltage: 28V
• Package Type: NI-1230S-4
• Operating Temperature: -40°C to +150°C
• Applications: Wireless infrastructure, LTE/GSM base stations, RF power amplifiers, and industrial RF systems.

Product Features:

• High RF Output Power: Provides up to 100W output power for high-performance RF applications.
• Optimized for RF Communication: Operates in the 1805 MHz – 1880 MHz frequency range, making it ideal for LTE, GSM, and wireless base stations.
• Superior Linearity: Designed to ensure low distortion and high signal integrity.
• High Efficiency: Advanced LDMOS technology enables up to 40% efficiency for lower power consumption.
• Durable & Rugged Design: Built to withstand voltage fluctuations and high-temperature operation.
• Broadband Performance: Offers reliable performance across a wide frequency range.
• Industry-Standard Package: Housed in an NI-1230S-4 package for easy circuit integration.
• RoHS Compliant: Meets environmental and regulatory standards for sustainable designs.