The IXGH20N120B is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage and high-current applications. Rated at 1200V and 20A, it is ideal for use in power electronics such as inverters, motor drives, and energy systems.
Technical Specifications:
Model Number: IXGH20N120B
Type: Insulated Gate Bipolar Transistor (IGBT)
Voltage Rating (V<sub>CES</sub>): 1200V
Collector Current (I<sub>C</sub>): 20A
Gate-Emitter Voltage (V<sub>GE</sub>): ±20V
Collector Dissipation (P<sub>tot</sub>): 150W
Package Type: TO-247
Operating Temperature Range: -55°C to +150°C
Product Features:
High Voltage Capability: Supports applications with voltages up to 1200V.
High Current Rating: Handles a continuous collector current of 20A.
Fast Switching: Enables efficient operation with minimal switching losses.
Low Saturation Voltage: Reduces conduction losses for improved performance.
Robust Design: Built for durability in high-stress environments.
TO-247 Package: Offers efficient thermal management and easy installation.
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