ISP75N – 75V N-Channel Power MOSFET

Description

Technical specifications:

• Transistor type: N-channel enhancement mode MOSFET
• Drain-source voltage (VDS): 75V
• Continuous drain current (ID): Depends on specific sub-variant/package (typically 30A or more)
• RDS(on): Low (exact value depends on variant, typically <10 mΩ)
• Gate threshold voltage (VGS(th)): ~2-4V
• Package type: TO-220, TO-252, or similar (based on version)
• Operating temperature range: -55°C to +150°C
• Applications: Power supplies, motor drivers, battery-powered systems, DC-DC converters

Product features:

• Voltage handling: Drain-source voltage of 75V, ideal for low to mid-voltage power switching.
• Low RDS(on): Offers reduced conduction losses and enhanced efficiency.
• High-speed switching: Ensures minimal switching losses and EMI in high-frequency applications.
• Compact design: Available in space-saving package suitable for high-density layouts.
• Reliable performance: Robust design with thermal stability for industrial and consumer electronics.