IRG4PC60UPBF – 600V UltraFast IGBT with Soft Recovery Diode

The IRG4PC60UPBF is a high-efficiency 600V Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode. Designed for high-speed switching in motor drives, UPS, and welding equipment, it delivers low switching loss and robust performance.

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Description

Technical specifications:

  • Collector-to-emitter voltage (VCES): 600V
  • Continuous collector current (IC): 38A @ 25°C
  • VCE(sat): 1.85V @ 30A
  • Gate charge: 160nC typical
  • Diode recovery time: 160ns typical
  • Package: TO-247AC
  • Operating temperature: -55°C to +150°C
  • Applications: Motor control, induction heating, UPS, solar inverters, welding equipment

Product features:

  • High voltage capability: 600V collector-to-emitter voltage
  • High current rating: 38A continuous collector current
  • Ultrafast switching: Reduces switching losses in high-frequency applications
  • Soft recovery diode: Integrated anti-parallel diode with low reverse recovery time
  • Low VCE(sat): Reduces conduction losses
  • Rugged and reliable: Tailored for demanding industrial environments

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