IRFS4310ZPBF – 100V N-Channel HEXFET Power MOSFET

Description

Technical specifications:

• Drain-to-source voltage (V_DSS): 100V
• Continuous drain current (I_D): 87A @ 25°C
• R_DS(on): 0.008Ω max @ V_GS = 10V
• Total gate charge (Q_g): 170nC typical
• Gate threshold voltage (V_GS(th)): 2.0V–4.0V
• Package: TO-220AB
• Operating temperature: -55°C to +175°C
• Applications: DC-DC converters, synchronous rectification, motor control, industrial and automotive power systems

Product features:

• High voltage capability: Supports up to 100V drain-to-source voltage
• Low R_DS(on): Only 0.008Ω max for reduced conduction losses
• Fast switching: Suitable for high-frequency applications
• TO-220AB package: Ensures efficient heat dissipation
• High current handling: Continuous drain current up to 87A
• RoHS compliant: Lead-free and environmentally friendly