IRFHM9331TRPBF – 30V Dual N-Channel HEXFET Power MOSFET

Description

Technical specifications:

• Drain-to-source voltage (V_DSS): 30V
• Continuous drain current (I_D): 6.1A per channel
• R_DS(on): 31mΩ max @ V_GS = 4.5V
• Total gate charge (Q_g): 7nC typical
• Gate threshold voltage (V_GS(th)): 1.0V – 3.0V
• Package: Micro8 (8-lead SOIC)
• Operating temperature: -55°C to +150°C
• Applications: Load switches, synchronous buck converters, portable electronics, handheld devices

Product features:

• Dual MOSFETs in one package: Optimized for compact power designs
• Low R_DS(on): 31mΩ max per channel for high efficiency
• Fast switching speed: Enhances performance in DC-DC converters
• Logic level gate drive: Fully operational with 2.5V gate drive
• Low gate charge: Reduces switching loss and improves efficiency
• Thermally efficient: Low thermal resistance for reliable operation