IRFB3607PBF – 75V, 80A N-Channel HEXFET Power MOSFET

Description

Technical specifications:

• Type: N-Channel Power MOSFET
• Drain-to-source voltage (V_DS): 75V
• Continuous drain current (I_D): 80A @ 25°C
• R_DS(on): 5.3 mΩ max @ V_GS = 10V
• Total gate charge: 140 nC typical
• Gate threshold voltage: 2.0 – 4.0V
• Package: TO-220AB
• Operating temperature range: -55°C to +175°C
• Applications: DC-DC converters, automotive electronics, industrial motor drivers, high-efficiency power supplies

Product features:

• Low R_DS(on): Only 5.3 mΩ max for reduced conduction losses.
• High current handling: Supports up to 80A continuous drain current at 25°C.
• HEXFET® technology: Delivers high-speed switching and ruggedness.
• Efficient thermal design: TO-220AB package ensures better heat dissipation.
• Fully avalanche rated: Built to handle extreme operating conditions safely.
• RoHS compliant: Lead-free design for eco-conscious applications.