IRF9Z30PBF – -60V P-Channel Power MOSFET in TO-220AB

Description

Technical specifications:

• Drain-to-source voltage (V_DSS): -60V
• Continuous drain current (I_D): -12A
• R_DS(on): 0.18Ω max @ V_GS = -10V
• Total gate charge (Q_g): 23nC typical
• Gate threshold voltage: -2.0V to -4.0V
• Package: TO-220AB
• Operating temperature: -55°C to +150°C
• Applications: Battery management, reverse polarity protection, DC switching, load switching

Product features:

• P-channel MOSFET: Simplifies design in reverse polarity and high-side switching circuits
• Low R_DS(on): Reduces power loss and heat generation
• High current capability: Handles continuous drain current up to 12A
• Standard gate drive: Compatible with 10V gate voltage logic
• TO-220AB package: Ensures efficient heat dissipation and ease of mounting