IRF7342QTRPBF – 55V Dual N-Channel HEXFET Power MOSFET

Description

Technical specifications:

• Drain-to-source voltage (V_DSS): 55V
• Continuous drain current (I_D): 5.2A per channel @ 25°C
• R_DS(on): 0.045Ω max @ V_GS = 10V
• Gate charge (Q_g): 9nC typical
• Gate threshold voltage (V_GS(th)): 1.0V – 2.5V
• Package: SO-8
• Operating temperature: -55°C to +150°C
• Applications: Automotive ECUs, power distribution modules, battery management systems, DC-DC converters

Product features:

• Automotive qualified: AEC-Q101 certified for high-reliability applications
• Dual N-channel MOSFETs: Two power MOSFETs in a compact SO-8 footprint
• Low R_DS(on): 0.045Ω max for efficient conduction
• Logic level drive: Compatible with low voltage gate control
• Fast switching: Ideal for high-speed, high-efficiency power systems
• RoHS compliant: Environmentally friendly and lead-free design