Description
Technical specifications:
- Transistor type: P-Channel MOSFET
- Drain-source voltage (VDS): -55V
- Continuous drain current (ID): 74A @ Tc = 25°C
- RDS(on): 0.02 Ω max
- Gate threshold voltage (VGS(th)): -2.0V to -4.0V
- Total gate charge (Qg): ~140nC
- Package type: TO-220AB
- Operating temperature range: -55°C to +175°C
- Applications: Automotive reverse polarity protection, power distribution, low-side switching, battery protection
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