IRF2805STRLPBF – 55V N-Channel Power MOSFET

Description

Technical specifications:

• Drain-to-source voltage (V_DSS): 55V
• Continuous drain current (I_D): 195A @ 25°C
• R_DS(on): 2.3mΩ max @ V_GS = 10V
• Total gate charge: 160nC typical
• Gate threshold voltage: 1.0V – 2.5V
• Package: D2PAK (TO-263AB)
• Operating temperature: -55°C to +175°C
• Applications: DC-DC converters, synchronous rectification, motor drivers, battery-powered systems

Product features:

• Ultra-low R_DS(on): Only 2.3mΩ max for minimized conduction loss
• High current capability: Supports continuous drain current up to 195A
• Low gate charge: Enables fast switching and reduced losses
• High power density: Ideal for compact and power-efficient designs
• Logic-level gate drive: Compatible with lower V_GS control signals
• Surface-mount package: D2PAK (TO-263AB) for efficient heat dissipation