IR2110STRPBF – High-Voltage, High-Speed Power MOSFET and IGBT Driver

Description

Technical specifications:

• Driver type: High- and low-side driver
• Maximum high-side voltage: 600V
• Gate drive voltage: 10V to 20V
• Propagation delay: ~120ns
• Input logic levels: TTL/CMOS compatible
• Under-voltage lockout: Yes, on both high-side and low-side
• Package: SOIC-14 (Surface Mount)
• Operating temperature: -40°C to +125°C
• Applications: Motor drivers, SMPS, inverters, welding equipment, lighting control

Product features:

• High voltage capability: Up to 600V for high-side floating operation.
• Dual-channel driver: Independently drives high-side and low-side devices.
• Logic input compatibility: TTL/CMOS compatible logic inputs for easy integration.
• Matched propagation delays: For precise and balanced switching performance.
• Under-voltage lockout: On both channels to protect against unsafe operation.
• Fast switching speed: Typical rise/fall time of 120ns enables high-frequency operation.