IPT007N06N – 60V N-Channel Power MOSFET, OptiMOS™-6, Infineon

Description

Technical specifications:

• Transistor type: N-Channel Power MOSFET
• Drain-source voltage (VDS): 60V
• Continuous drain current (ID): Up to 195A (Tc = 25°C)
• RDS(on): 0.7 mΩ max @ VGS = 10V
• Gate charge (Qg): ~85 nC
• Gate threshold voltage (VGS(th)): 2V to 4V
• Package: TSDSON-8 (SuperSO8)
• Operating temperature: -55°C to +175°C
• Applications: DC-DC converters, synchronous rectification, battery management, automotive ECUs, power distribution systems

Product features:

• Ultra-low RDS(on): Just 0.7 mΩ for reduced conduction losses and higher efficiency.
• 60V drain-source voltage: Optimized for low-voltage, high-current applications.
• High current capacity: Supports up to 195A (typical) continuous current.
• Optimized for switching: Low gate charge for fast switching performance.
• Thermal performance: Enhanced heat dissipation with TSDSON-8 package.
• Reliable: AEC-Q101 qualified and RoHS compliant.