IPP180N10N3G – 100V, 180A N-Channel Power MOSFET

Description

Technical specifications:

• MOSFET type: N-Channel
• Drain-source voltage (Vds): 100V
• Continuous drain current (Id): 180A (Tc = 25°C)
• RDS(on): 3.4 mΩ (typ. at Vgs = 10V)
• Total gate charge (Qg): 139 nC
• Gate threshold voltage (Vgs(th)): 2.0V – 4.0V
• Package: TO-220
• Operating temperature range: -55°C to +175°C
• Applications: High-power DC-DC converters, battery management systems, automotive motor drives, and industrial switching systems

Product features:

• Low RDS(on): Just 3.4 mΩ at Vgs = 10V, reducing conduction losses and heat generation.
• High drain current: Supports up to 180A continuous drain current.
• Fast switching speed: Optimized for high-frequency power conversion.
• Logic-level drive: Compatible with standard 10V gate drive.
• Rugged design: Avalanche rated and thermally robust TO-220 package.
• RoHS compliant: Environmentally friendly design.