IPD50N04S4L-08 – 40V N-Channel OptiMOS™ Power MOSFET

Description

Technical specifications:

• Type: N-Channel MOSFET
• Drain-source voltage (VDS): 40V
• Continuous drain current (ID): Up to 50A
• Gate threshold voltage (VGS(th)): 2V to 4V
• RDS(on): 8.2 mΩ max at VGS = 10V
• Total gate charge (Qg): Low, enabling efficient switching
• Package: DPAK (TO-252)
• Operating temperature range: -55°C to +175°C
• Applications: Automotive power supplies, load switching, motor control, low-voltage inverters

Product features:

• Ultra-low on-resistance: RDS(on) of just 8.2 mΩ at VGS = 10V for minimal conduction losses.
• High current handling: Supports high continuous drain current for demanding loads.
• Logic-level gate drive: Compatible with standard 5V logic circuits.
• Fast switching speed: Ideal for high-frequency applications like DC-DC converters and power management.
• Robust construction: Avalanche-rated with high ruggedness for automotive-grade reliability.
• Compact footprint: Supplied in a DPAK (TO-252) package for space-constrained designs.