IPD100N06S4-03 – 60V N-Channel Power MOSFET (OptiMOS™-4)

Description

Technical specifications:

• Transistor type: N-channel power MOSFET
• Drain-source voltage (VDS): 60V
• Continuous drain current (ID): 100A (at Tc = 25°C)
• RDS(on): 3.0 mΩ (at VGS = 10V)
• Gate threshold voltage (VGS(th)): 2.0 – 3.0V
• Package type: DPAK (TO-252)
• Total gate charge (Qg): 33 nC (typ.)
• Operating temperature range: -55°C to +175°C
• Applications: Automotive power management, motor drivers, DC-DC converters, industrial switching

Product features:

• Low RDS(on): Only 3.0 mΩ for high-efficiency switching and minimal conduction loss.
• High-speed switching: Reduced switching losses and EMI, ideal for high-frequency operation.
• Thermal optimized DPAK package: Ensures excellent thermal conductivity and compact layout.
• Logic-level gate drive: Compatible with 5V logic for easier integration into microcontroller systems.
• Automotive qualified: AEC-Q101 certified for reliability in harsh automotive environments.