FQPF4N90 – 900V N-Channel MOSFET

Description

echnical Specifications:

• Type: N-Channel Power MOSFET
• Drain-Source Voltage (Vds): 900V
• Continuous Drain Current (Id): 4A
• RDS(on) (Max): Low resistance for high efficiency
• Gate Charge (Qg): Optimized for fast switching
• Package Type: TO-220F (Fully Isolated)

Product Features:

• High Voltage Rating: Supports up to 900V, making it ideal for high-power applications.
• Low RDS(on): Minimizes conduction losses and improves overall efficiency.
• Fast Switching Speed: Enhances system performance in high-frequency applications.
• Robust Thermal Performance: Efficient heat dissipation for stable operation.
• TO-220F Package: Fully isolated package for easy mounting and improved electrical insulation.