FDV301N – N-Channel Digital FET, 25V, 220mA

Technical Specifications:

• Type: N-Channel Digital FET
• Drain-Source Voltage (Vds): 25V
• Continuous Drain Current (Id): 220mA (500mA peak)
• RDS(on): 4Ω (typical) at Vgs = 4.5V, 5Ω (typical) at Vgs = 2.7V
• Gate Threshold Voltage (Vgs(th)): 0.85V (typical), 1.5V (max)
• Power Dissipation: 350mW
• Operating Temperature Range: -55°C to 150°C
• Package Type: SOT-23-3, 3-pin, surface-mount

Product Features:

• Low Voltage Operation: Rated at 25V with very low gate threshold (<1.5V) for direct 3V circuit compatibility.
• High Efficiency: Features low RDS(on) of 4Ω at 4.5V Vgs and 5Ω at 2.7V Vgs, minimizing power loss.
• Compact Size: Housed in a small SOT-23-3 package for surface-mount applications.
• ESD Protection: Includes a gate-source Zener diode, withstanding >6kV (Human Body Model).
• Digital Transistor Replacement: Eliminates the need for bias resistors, replacing multiple NPN transistors.
• Fast Switching: Optimized for low-voltage, high-density DMOS technology for rapid response.
• Low Power Dissipation: Rated at 350mW, ideal for energy-efficient designs.