FDN360P – 20V P-Channel MOSFET with Low RDS(on)

Description

Technical Specifications:

• MOSFET Type: P-Channel
• Drain-Source Voltage (Vds): -20V
• Continuous Drain Current (Id): -2.5A
• Gate Threshold Voltage (Vgs): -0.5V to -1.5V
• RDS(on): 80mΩ @ Vgs = -2.5V
• Power Dissipation (Pd): 0.5W
• Package Type: SOT-23 (Small Outline Transistor)
• Operating Temperature Range: -55°C to +150°C
• Applications: Battery management, load switching, power regulation, DC-DC converters, and portable electronics.

Product Features:

• Low RDS(on): Reduces conduction losses for improved efficiency.
• High-Speed Switching: Optimized for fast turn-on/off times in switching applications.
• Voltage Rating: Supports a drain-to-source voltage (Vds) of up to 20V.
• Current Rating: Continuous drain current (Id) of up to -2.5A.
• Compact Package: SOT-23 package for space-saving PCB designs.
• Thermal Efficiency: Low thermal resistance ensures stable operation under load.