FDMC86262P – P-Channel PowerTrench® MOSFET, -150V, -8.4A

Technical Specifications:

• Type: P-Channel PowerTrench® MOSFET
• Drain-Source Voltage (Vds): -150V
• Continuous Drain Current (Id): -8.4A (at Tc = 25°C)
• RDS(on): 307mΩ (max) at Vgs = -10V, Id = -2A; 356mΩ (max) at Vgs = -6V, Id = -1.8A
• Gate Charge (Qg): 5.6nC (typical) at Vgs = -10V
• Power Dissipation: 40W (Tc), 2.3W (Ta)
• Operating Temperature: -55°C to +150°C
• Package Type: Power 33 (QFN-8, 3x3mm), 8-pin, surface-mount

Product Features:

• P-Channel Design: Optimized for negative polarity switching with superior efficiency.
• Low On-Resistance: Max RDS(on) of 307mΩ at -10V Vgs, minimizing conduction losses.
• High Voltage Capability: Supports -150V drain-source voltage for robust applications.
• Moderate Current Handling: Rated for -8.4A continuous current (-2A at max RDS(on)).
• Fast Switching: Low gate charge (5.6nC typical at -10V) ensures quick response times.
• Compact Package: Housed in a Power 33 QFN (3x3mm) for space-saving surface-mount designs.
• PowerTrench® Technology: Delivers very low RDS(on) and optimized switching performance.
• 100% UIL Tested: Ensures reliability under unclamped inductive load conditions.