CY7C1148KV18-400BZXC – 18Mb High-Speed SRAM with QDR II+ Architecture

Description

Technical Specifications:

• Memory Type: SRAM (Static Random-Access Memory)
• Capacity: 18Mb
• Data Rate: Quad Data Rate II+ (QDR II+)
• Clock Speed: Up to 400 MHz
• Voltage Supply: 1.8V
• Package: 165-ball FBGA
• Operating Temperature: -40°C to +85°C
• Applications: High-speed networking, telecom infrastructure, data buffering, high-performance computing, and caching applications.

Product Features:

• High-Speed Operation: Operates at a clock speed of up to 400 MHz for fast data access.
• Memory Capacity: 18Mb storage for high-performance computing and networking applications.
• Low Latency: Designed for minimal delays, ensuring efficient data handling.
• Interface: QDR II+ (Quad Data Rate), delivering high throughput.
• Operating Voltage: 1.8V for reduced power consumption.
• Wide Temperature Range: Suitable for industrial and commercial environments.
• Package Type: 165-ball FBGA for compact and reliable integration.