CY7C1061G30-10ZSXI – 16-Mbit (1M x 16) High-Speed Asynchronous SRAM with ECC

Description

Technical Specifications:

• Memory Type: Asynchronous SRAM
• Memory Density: 16 Mbit (1M x 16)
• Access Time: 10 ns
• Supply Voltage: 2.2V to 3.6V
• Operating Temperature: -40°C to +85°C
• Package: 54-pin TSOP II

Product Features:

• High-Speed Performance: 10 ns access time ensures quick data retrieval.
• Error-Correcting Code (ECC): Integrated ECC detects and corrects single-bit errors during read cycles, enhancing data reliability.
• Low Power Consumption: Operates efficiently within a 2.2V to 3.6V supply voltage range.
• Standard SRAM Operation: Functions as a standard asynchronous SRAM with no latency for write operations.
• Industrial Temperature Range: Suitable for operation in temperatures ranging from -40°C to +85°C.
• Compact Package: Available in a 54-pin TSOP II package for space-efficient designs.