SZ097N04LSG – 40V N-Channel Power MOSFET, OptiMOS™ 5, Infineon

Description

Technical specifications:

• Transistor type: N-Channel Power MOSFET
• Drain-source voltage (VDS): 40V
• Continuous drain current (ID): 120A (Tc = 25°C)
• RDS(on): 0.97 mΩ max @ VGS = 10V
• Gate charge (Qg): ~60 nC (typical)
• Package: PG-TDSON-8 (SuperSO8)
• Operating temperature: -55°C to +175°C
• Applications: Automotive power supply, motor control, DC-DC converters, battery protection, synchronous rectification

Product features:

• Low RDS(on): Only 0.97 mΩ (max) @ VGS = 10V for minimal conduction losses.
• High current handling: Supports continuous drain current up to 120A.
• Voltage rating: 40V drain-source voltage for low-voltage power switching.
• Fast switching: Optimized gate charge for high-speed operation.
• Compact package: PG-TDSON-8 (SuperSO8) offering thermal efficiency and space savings.
• Automotive qualified: AEC-Q101 compliant for reliability in vehicle environments.