BSP76 E6433 – N-Channel Logic Level Enhancement Mode Power MOSFET

Description

Technical specifications:

• Transistor type: N-Channel Enhancement Mode MOSFET
• Drain-source voltage (VDS): 60V
• Continuous drain current (ID): 2A @ 25°C
• RDS(on): ~0.13Ω at VGS = 4.5V
• Gate threshold voltage (VGS(th)): 1V to 2.5V
• Power dissipation: Up to 1.5W
• Package type: SOT-223 (Surface Mount)
• Operating temperature range: -55°C to +150°C
• Applications: Load switches, power management modules, LED drivers, DC motor control

Product features:

• Logic level gate drive: Operates effectively with standard microcontroller voltages (2.5V–5V).
• Low RDS(on): Ensures minimal conduction losses and improved energy efficiency.
• High-speed switching: Suitable for PWM, DC-DC conversion, and fast-switching circuits.
• Thermal-efficient package: Comes in a compact SOT-223 housing for heat dissipation in dense PCBs.
• Robust performance: Avalanche-rated and suitable for industrial temperature ranges.