BSP75N – N-Channel Logic Level Enhancement Mode MOSFET

Description

Technical specifications:

• Transistor type: N-Channel Enhancement Mode MOSFET
• Drain-source voltage (VDS): 60V
• Continuous drain current (ID): 2.1A (at 25°C)
• RDS(on): ~0.13Ω at VGS = 4.5V
• Gate threshold voltage (VGS(th)): 1V–2.5V
• Power dissipation: 1.5W
• Package type: SOT-223
• Operating temperature: -55°C to +150°C
• Applications: DC-DC converters, LED drivers, switching regulators, power management

Product features:

• Low RDS(on): Ensures minimal conduction losses, improving efficiency.
• Logic level drive: Fully enhanced with gate voltages as low as 2.5V–5V.
• Fast switching speed: Ideal for PWM applications and signal switching.
• Thermally efficient package: SOT-223 with low thermal resistance for compact PCBs.
• Robust performance: Avalanche rated and ESD protected.