BSC100N10NSF G – 100V 100A N-Channel Power MOSFET, OptiMOS™ 3, Infineon

Description

Technical specifications:

• Transistor type: N-Channel Power MOSFET
• Drain-source voltage (VDS): 100V
• Continuous drain current (ID): 100A (Tc = 25°C)
• RDS(on): 3.1 mΩ max @ VGS = 10V
• Gate charge (Qg): ~64 nC
• Package: PG-TDSON-8 (SuperSO8)
• Operating temperature: -55°C to +175°C
• Applications: Synchronous rectification, DC-DC converters, telecom power supplies, motor control, battery management systems

Product features:

• Low RDS(on): 3.1 mΩ max at VGS = 10V, minimizing conduction losses.
• High current capability: Handles up to 100A continuous drain current.
• Voltage rating: Supports up to 100V VDS for medium-voltage applications.
• Fast switching: Optimized gate charge for high-frequency operation.
• Robust package: Housed in standard PG-TDSON-8 (SuperSO8) for compact, thermally efficient layout.
• 100% avalanche tested: Ensures ruggedness under dynamic operating conditions.