BCR135E6327 – NPN Digital Transistor with Integrated Bias Resistors

Description

Technical specifications:

• Transistor type: NPN digital transistor
• Collector-emitter voltage (VCEO): 50V
• Collector current (IC max): 100 mA
• Resistor values: R1 = 2.2kΩ, R2 = 47kΩ
• Saturation voltage (VCE(sat)): ~0.3V @ IC = 10mA
• Power dissipation: 200 mW
• Package type: SOT-23 (3-pin)
• Operating temperature: -55°C to +150°C
• Applications: Switching, signal amplification, logic interfaces, driver circuits

Product features:

• Integrated resistors: Built-in base and base-emitter resistors simplify circuit layout.
• Compact package: SOT-23 surface-mount for space-saving designs.
• Low saturation voltage: Ensures efficient switching with minimal power loss.
• Stable performance: Reliable operation in various temperature ranges.
• RoHS compliant: Environmentally friendly and lead-free.