Description
Technical Specifications:
- Transistor Type: NPN BJT
- Collector-Emitter Voltage (VCE): 80V
- Emitter-Base Voltage (VBE): 5V
- Collector Current (IC): 800mA
- DC Current Gain (hFE): 100 to 800
- Saturation Voltage (VCE(sat)): 0.5V
- Package Type: TO-92
- Operating Temperature Range: -55°C to +150°C
- Compliance: RoHS Compliant
- Applications: Amplifiers, switching, signal processing, relay drivers, power management.
Reviews
There are no reviews yet.