BC57G687C-INN-E4 – Bipolar Transistor (NPN)

The BC57G687C-INN-E4 is a high-performance NPN bipolar junction transistor (BJT) designed for use in low to medium power switching and amplification applications. It offers excellent frequency response and high current gain, making it ideal for audio amplification, signal processing, and power management systems.

Description

Technical Specifications:

  • Transistor Type: NPN BJT
  • Collector-Emitter Voltage (VCE): 80V
  • Emitter-Base Voltage (VBE): 5V
  • Collector Current (IC): 800mA
  • DC Current Gain (hFE): 100 to 800
  • Saturation Voltage (VCE(sat)): 0.5V
  • Package Type: TO-92
  • Operating Temperature Range: -55°C to +150°C
  • Compliance: RoHS Compliant
  • Applications: Amplifiers, switching, signal processing, relay drivers, power management.

Product Features:

  • NPN Transistor: Designed for switching and amplification applications in both analog and digital circuits.
  • High Current Gain (hFE): Provides high current gain, ensuring efficient signal amplification and low power consumption.
  • Fast Switching Speed: Suitable for high-speed switching applications, making it ideal for signal processing and audio circuits.
  • Low Saturation Voltage (VCE(sat)): Reduces power loss and increases efficiency in low-voltage circuits.
  • Wide Operating Temperature Range: Operates effectively in a range of temperatures from -55°C to +150°C, making it suitable for diverse environments.
  • RoHS Compliant: Environmentally friendly and lead-free, complying with RoHS regulations.
  • Applications: Audio amplifiers, signal processing, low-power switches, relay drivers, and power management circuits.

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