IKW40N120H3 – 1200V, 40A IGBT in TO-247 Package

The IKW40N120H3 is a high-performance 1200V insulated-gate bipolar transistor (IGBT) designed by Infineon Technologies. This 40A IGBT features fast switching, low saturation voltage, and excellent ruggedness, making it ideal for high-efficiency industrial and automotive inverters, UPS systems, and motor drives.

Product Brochure

Description

Technical specifications:

  • IGBT type: IKW40N120H3
  • Collector-emitter voltage (VCE): 1200V
  • Collector current (IC): 40A (Tc = 25°C)
  • Gate-emitter voltage: ±20V max
  • Saturation voltage VCE(sat): Typically 2.05V at 25°C
  • Switching frequency: Optimized for frequencies up to 30 kHz
  • Short-circuit withstand time: Up to 10 µs
  • Package: TO-247
  • Operating temperature range: -55°C to +150°C
  • Applications: UPS systems, welding inverters, solar inverters, industrial drives, automotive power electronics

Product features:

  • High voltage handling: 1200V collector-emitter voltage for demanding industrial and automotive applications.
  • High current capability: Rated for 40A continuous collector current.
  • Low saturation voltage (VCE(sat)): Minimizes conduction losses and improves system efficiency.
  • Fast switching performance: Enables high-frequency operation and reduced switching losses.
  • High ruggedness: Designed for robustness under short-circuit and overload conditions.
  • Standard TO-247 package: Excellent thermal performance and easy integration into existing designs.

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