MRF8S8260HSR3 – High-Power RF LDMOS Transistor

Description

Technical Specifications:

• Technology: LDMOS (Laterally Diffused Metal Oxide Semiconductor)
• Frequency Range: 800 MHz – 2600 MHz
• Output Power: 260W Peak
• Efficiency: High-efficiency RF performance
• Gain: High linear gain for superior signal amplification
• Thermal Resistance: Optimized for minimal heat buildup
• Operating Voltage: 28V
• Package Type: NI-1230S-4

Product Features:

• High Output Power: Delivers up to 260W peak power for RF applications.
• Broad Frequency Range: Operates efficiently between 800 MHz and 2600 MHz.
• LDMOS Technology: Ensures high gain, efficiency, and durability.
• High Efficiency: Optimized for reduced heat dissipation and lower energy consumption.
• Rugged Design: Withstands high VSWR conditions for reliable operation.
• Low Distortion: Ensures clear and high-quality signal amplification.
• Compact Package: Encapsulated in an NI-1230S-4 package for easy integration.