NDS331N – N-Channel Logic Level Enhancement Mode MOSFET

Technical Specifications:

• Type: N-Channel Logic Level MOSFET
• Drain-Source Voltage (Vds): 20V
• Continuous Drain Current (Id): 1.3A
• RDS(on): 160mΩ (max) at Vgs = 4.5V, 210mΩ (max) at Vgs = 2.5V
• Gate Threshold Voltage (Vgs(th)): 1V (max)
• Gate Charge (Qg): 3.5nC (typical) at Vgs = 10V
• Power Dissipation: 500mW
• Operating Temperature Range: -55°C to 150°C
• Package Type: SOT-23-3, 3-pin, surface-mount

Product Features:

• Low Voltage Operation: Rated at 20V with a low gate threshold (1V max) for logic-level control.
• Low On-Resistance: Typical RDS(on) of 160mΩ at 4.5V Vgs and 210mΩ at 2.5V Vgs, minimizing power loss.
• Moderate Current Capacity: Supports up to 1.3A continuous drain current.
• Fast Switching: Low gate charge (3.5nC typical at 10V) ensures quick response times.
• Compact Design: Housed in a small SOT-23-3 package for surface-mount applications.
• High Density DMOS Technology: Provides exceptional on-resistance and current capability.
• Power Efficient: Rated at 500mW dissipation, ideal for battery-powered circuits.