MMDT3904-7-F – Dual NPN General-Purpose Transistor

Description

Technical Specifications:

• Transistor Type: Dual NPN
• Collector-Emitter Voltage (Vce): 40V
• Continuous Collector Current (Ic): 200mA
• Gain (hFE): 100-300
• Power Dissipation (Pd): 300mW
• Package Type: SOT-363 (SC-88)
• Operating Temperature Range: -55°C to +150°C
• Applications: Signal amplification, logic circuits, switching applications, and low-power electronic designs.

Product Features:

• Dual NPN Transistor: Two NPN transistors in a single package for compact circuit design.
• High Gain (hFE): Ensures efficient signal amplification.
• Fast Switching Speed: Suitable for high-speed digital and analog applications.
• Collector-Emitter Voltage (Vce): 40V maximum for versatile applications.
• Continuous Collector Current (Ic): 200mA per transistor.
• Low Saturation Voltage: Enhances efficiency in switching applications.
• Compact SOT-363 Package: Space-saving design for modern PCB layouts.